Undoped silicon wafers are pure silicon wafers that have not been intentionally doped with impurities. They have a high resistance because there are no impurities present to create additional conductive paths.
Buy Undoped Silicon Wafers Online!
Intrinsically doped silicon wafers, on the other hand, have been intentionally doped with impurities in order to alter their electrical properties. Doping involves introducing impurities into the silicon crystal lattice in order to create additional electrons or holes, which can increase the wafer's conductivity. Doping is achieved by introducing impurities such as phosphorus or boron into the silicon wafer.
Intrinsically doped silicon wafers are used in the production of various electronic devices, such as transistors and solar cells, because their electrical properties can be tailored through the use of different dopants and doping concentrations. In contrast, undoped silicon wafers are used primarily as a substrate material for the growth of other semiconductor materials and as a starting material for the production of doped wafers.
Undoped silicon wafers are used as a substrate material for the growth of various semiconductor materials, such as doped silicon, germanium, and gallium arsenide. They are also used in the production of microelectromechanical systems (MEMS), which are tiny devices that combine mechanical and electrical components on a microscale. In addition, undoped silicon wafers are used in the production of solar cells, as they have a high resistance to thermal stress and can withstand high temperatures. They are also used in the production of integrated circuits, sensors, and other electronic devices.
Below are just some othe intrinsic/undoped silicon wafers that we have in stock.
| Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that layer); Material - CZ unless noted Note: Items sold in quantities of 25, unless noted |
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| Item | Qty in | Type/Dopant | Orient. | Dia(mm) | Thck(um) | Polish | Res ohm-cm | Comment |
| 8297 | 50 | n-type Si:P | [100] | 8" | 725 | P/E | FZ 2,000-6,000 | SEMI notch Prime with LaserMark, TTV<6μm, Bow<15μm, Warp<40μm, MCC Lifetime>1,000μs, Empak cst |
| E239 | 1 | n-type Si:P | [100] | 6" | 825 | C/C | FZ 7,000-8,000 {7,025-7,856} | SEMI, 1Flat, MCC Lifetime=7,562μs, in Unsealed Empak cst |
| F662 | 5 | p-type Si:B | [100] | 6" | 625 | P/P | FZ 2,652-2,743 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| B863 | 45 | n-type Si:P | [100] | 5" | 400 | P/E | FZ 7,000-14,300 | SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst |
| D863 | 7 | n-type Si:P | [100] | 5" | 400 | P/E | FZ 7,000-14,300 | SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst |
| C863 | 5 | n-type Si:P | [100] | 5" | 350 | P/E | FZ 5,000-10,000 | SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst |
| E804 | 17 | p-type Si:B | [100] | 5" | 762 | P/P | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<2μm, Bow<10μm, Warp<20μm, Empak cst |
| S5900 | 15 | n-type Si:P | [111] ±0.5° | 5" | 275 | P/P | FZ 7,000-20,000 | SEMI Prime, 2Flats, Empak cst |
| L173 | 21 | p-type Si:B | [111] ±0.5° | 4" | 397 | P/E | FZ 10,000-15,000 | SEMI Prime, Backside ACID Etched, Empak cst |
| G845 | 1 | n-type Si:P | [111] ±0.25° | 4" | 675 | P/E | FZ 7,000-10,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000μs, Light scratches, in Empak |
| 7482 | 15 | n-type Si:P | [100] | 4" | 525 ±10 | P/P | FZ 7,000-10,000 | SEMI Prime, 1Flat, TTV<5μm, MCC Lifetime>1,000μs, in Empak cst |
| H411 | 2 | n-type Si:P | [100] | 4" | 380 | P/E | FZ 5,000-10,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000μs, Empak cst |
| 6747 | 75 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/P | FZ 5,000-10,000 | SEMI Prime, 2Flats, MCC Lifetime >1,000μs, Empak cst |
| 8238 | 50 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 5,000-20,000 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |
| 10094 | 50 | n-type Si:P | [100] | 4" | 500 ±10 | P/E | FZ 5,000-8,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000μs, Empak cst |
| 10656 | 242 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 5,000-20,000 | SEMI Prime, 1Flat, TTV<5μm, MCC Lifetime>1,000μs, Empak cst |
| A0656 | 1 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 5,000-20,000 | SEMI Prime, 1Flat, TTV<5μm, MCC Lifetime>1,000μs, Empak cst |
| E454 | 14 | n-type Si:P | [100] | 4" | 500 | G/G | FZ 4,300-6,300 | SEMI, 2Flats, Both sides Fine Ground, MCC Lifetime>1,000μs, Empak cst |
| M845 | 2 | n-type Si:P | [111] ±0.25° | 4" | 525 | P/E | FZ 3,000-5,000 | SEMI TEST (light scratches), 1Flat, Empak cst |
| L845 | 10 | n-type Si:P | [111] ±0.25° | 4" | 525 | P/E | FZ 3,000-5,000 | SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers |
| E171 | 2 | n-type Si:P | [111] ±0.5° | 4" | 275 | P/P | FZ 2,700-3,300 | SEMI Prime, 2Flats, Empak cst |
| S5798 | 15 | n-type Si:P | [100] | 4" | 915 ±10 | E/E | FZ 2,000-3,000 | SEMI, 1Flat at <100> {not at <110>}, Empak cst |
| 2454 | 6 | n-type Si:P | [100] | 4" | 400 | P/E | FZ 2,000-6,500 | SEMI Prime, 2Flats, MCC Lifetime>1,000μs, Empak cst |
| E189 | 48 | n-type Si:P | [100] | 4" | 300 | L/L | FZ 1,100-1,600 | SEMI, 1Flat, Empak cst |
| 10242 | 150 | Intrinsic Si:- | [111] ±0.5° | 4" | 525 | P/P | FZ 15,000-20,000 | SEMI Prime, 1Flat, TTV<5μm, MCC Lifetime>1,000μs, Empak cst |