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Like 100mm silicon wafers, 150mm silicon wafers are also widely used as a substrate material in the semiconductor industry for the fabrication of integrated circuits (ICs). They are also used in the production of a variety of other electronic and optoelectronic devices, such as solar cells, LED lighting, and thin-film transistors.
In the semiconductor industry, 150mm silicon wafers are used in the fabrication of a variety of ICs, including microprocessors, memory chips, and other types of integrated circuits. The wafers are coated with a thin layer of photoresist and then patterned using photolithography techniques to create the desired circuit patterns. The wafers are then subjected to various processing steps, such as etching and doping, to create the active and passive components of the IC.
In addition to their use in the semiconductor industry, 150mm silicon wafers are also used in the production of solar cells. They are coated with a thin layer of photovoltaic material, such as crystalline silicon, and then patterned and processed to create solar cells with high conversion efficiencies.
150mm silicon wafers are also used in the production of LED lighting, where they serve as a substrate material for the growth of LED crystals. They are also used in the production of thin-film transistors, which are used in LCD displays and other electronic devices. The larger size of 150mm wafers allows for increased efficiency in the production process, as more devices can be fabricated on a single wafer.
| Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted | ||||||||
| Item | Qty in | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment |
| Stock | (μm) | Ωcm | ||||||
| TS004 | 34 | p-type Si:B | [100] | 6" | 675 ±15 | P/E | MCZ 0.01-0.02 {0.013-0.017} | SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Oxygen=(3-9)ppma, Carbon<1ppma, Back-side: Acid etch, Empak cst |
| 10507 | 25 | p-type Si:B | [100] | 6" | 400 ±15 | P/P | FZ >8,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>500μs, Empak cst |
| N667 | 1 | p-type Si:B | [100] ±0.1° | 6" | 775 | P/P | FZ >2,500 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, Empak cst |
| B208 | 1 | n-type Si:P | [100] ±1° | 6" | 1,000 ±50 | P/P | FZ >9,500 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime=6,934μs, Empak cst |
| E239 | 1 | n-type Si:P | [100] | 6" | 825 | C/C | FZ 7,000-8,000 {7,025-7,856} | SEMI, 1Flat, MCC Lifetime=7,562μs, in Unsealed Empak cst |
| L625 | 3 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 625 | P/E | FZ >3,500 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| F700 | 5 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 790 ±10 | C/C | FZ >3,500 | SEMI, 1Flat (57.5mm), Empak cst |
| 4982 | 19 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | FZ >1,000 | SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst |
| D982 | 1 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | BROKEN | FZ >1,000 | SEMI notch BROKEN - one piece ~50% of wafers other pieces ~20% of wafer, Empak cst |
| O353 | 1 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 50-70 | SEMI Prime, 1Flat, MCC Lifetime>14,980μs, LaserMark, Empak cst |
| 5325 | 3 | n-type Si:P | [100] | 6" | 725 | P/P | FZ 50-70 {57-62} | SEMI Prime, 1Flat (57.5mm), MCC Lifetime=15,700μs, Empak cst |
| 6883 | 13 | n-type Si:P | [100] | 6" | 625 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<3μm, Empak cst |
| G883 | 6 | n-type Si:P | [100] | 6" | 650 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<3μm, Empak cst |
| F883 | 10 | n-type Si:P | [100] | 6" | 675 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<3μm, Empak cst |
| 10784 | 98 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 35-70 | SEMI Prime, 1Flat, Empak cst |
| A063 | 75 | n-type Si:P | [100] | 6" | 280 | P/P | FZ 1-5 | PV FZ Reference wafers SEMI Prime, 2Flats {PF at <1,-1,0>±1°, SF 135° from PF}, TTV<4μm, Bow<4μm, MCC Lifetime=17,100μs, Empak cst |
| G228 | 3 | n-type Si:P | [111] ±0.5° | 6" | 300 ±15 | BROKEN | FZ >6,000 | BROKEN into a dozen large pieces ranging from 65% of wafer to 5% and small pieces as well |
| N445 | 7 | n-type Si:P | [112-5.0° towards[11-1]] ±0.5° | 6" | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips, Empak cst |
| G343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 1,000 ±10 | C/C | FZ >3,000 | SEMI Prime, JEIDA Flat (47.5mm), TTV<4μm, MCC Lifetime>1,000μs, Empak cst |
| 10273 | 25 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, MCC Lifetime>1,000μs, Empak cst |
| A0273 | 25 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| 10421 | 25 | Intrinsic Si:- | [100] | 6" | 675 | P/E | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| D929 | 1 | Intrinsic Si:- | [100] | 6" | 675 | P/E | FZ >20,000 | SEMI TEST (scratched), 1Flat (57.5mm), MCC Lifetime>1,000μs, in Unsealed Empak cst |
| B0257 | 5 | Intrinsic Si:- | [100] | 6" | 780 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| A0257 | 7 | Intrinsic Si:- | [100] | 6" | 803 ±5 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| I299 | 9 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 10546 | 119 | Intrinsic Si:- | [100] | 6" | 675 ±10 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, TTV<10μm, Bow/Warp<30μm, Empak cst |
| A557 | 5 | Intrinsic Si:- | [100] | 6" | 675 ±10 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| A0546 | 71 | Intrinsic Si:- | [100] | 6" | 675 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, TTV<10μm, Bow/Warp<30μm, Empak cst |
| G458 | 5 | p-type Si:B | [110] ±0.5° | 6" | 390 ±10 | C/C | >10 | SEMI, 1Flat (57.5mm) at <111>±0.5°, Empak cst |
| 10334 | 200 | p-type Si:B | [110] ±0.25° | 6" | 625 ±15 | P/E | 20-Oct | SEMI Prime, 2Flats {PF at <111>±0.5°, SF at <111> CW 109.5° from PF}, TTV<5μm, Empak cst |
| A0229 | 8 | p-type Si:B | [110] ±0.25° | 6" | 625 ±15 | P/E | 20-Oct | SEMI Prime, 2Flats {PF at <111>±0.5°, |
| SF at <111>±5.0° CW 109.5° from PF}, TTV<5μm, Empak cst | ||||||||
| A0334 | 4 | p-type Si:B | [110] ±0.25° | 6" | 625 ±15 | P/E | 20-Oct | SEMI Prime, 2Flats {PF at <111>±0.5°, SF at <111> CW 109.5° from PF}, TTV<5μm, Empak cst |
| D283 | 1 | p-type Si:B | [110] ±0.5° | 6" | 675 | P/P | >10 | SEMI Prime, 2Flats {PF(57mm) at <111>±1°, SF(37mm) at <111> 70.5° CW from PF}, Empak cst |
| 5354 | 6 | p-type Si:B | [100-9.7° towards[001]] ±0.1° | 6" | 525 | P/P | 20-30 | SEMI Prime, 1Flat (57.5mm) at <110>±0.1°, Empak cst |
| 10109 | 50 | p-type Si:B | [100] | 6" | 675 | P/P | 20-Oct | SEMI Prime, 1Flat (57.5mm), TTV<8μm, Bow<5μm, Warp<10μm, Empak cst |
| 10727 | 200 | p-type Si:B | [100] | 6" | 675 | P/P | 20-Oct | SEMI Prime, 1Flat (57.5mm), TTV<7μm, Bow<10μm, Warp<20μm, Empak cst |
| L405 | 4 | p-type Si:B | [100] | 6" | 1,000 | P/P | 15-Oct | SEMI Prime, 1Flat (57.5mm), 4 Prime wafers plus 2 scratched wafers at no cost, Empak cst |
| 10200 | 50 | p-type Si:B | [100] | 6" | 1,000 | P/E | 10-May | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| 10358 | 114 | p-type Si:B | [100] | 6" | 1,000 | P/E | 10-May | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| C929 | 7 | p-type Si:B | [100] | 6" | 400 | P/P | 30-Jan | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| C462 | 1 | p-type Si:B | [100] | 6" | 440 | P/E | 30-Jan | SEMI Prime, 1Flat (57.5mm), Empak cst |
| D964 | 2 | p-type Si:B | [100] | 6" | 500 | P/P | 30-Jan | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| 10515 | 9 | p-type Si:B | [100] | 6" | 525 | P/P | 30-Jan | SEMI, 1Flat (57.5mm), TTV<1μm, Bow<10μm, Warp<10μm, Empak cst |
| B0515 | 3 | p-type Si:B | [100] | 6" | 525 | P/P | 30-Jan | SEMI, 1Flat (57.5mm), TTV<1μm, Bow<20μm, Warp<20μm, Empak cst |
| 10066 | 200 | p-type Si:B | [100] | 6" | 575 | P/E | 1-100 | SEMI Prime, JEIDA Flat(47.5mm), Empak cst |
| R392 | 1 | p-type Si:B | [100] | 6" | 620 | P/P | 30-Jan | SEMI Prime, 1Flat (57.5mm), TTV<1μm, Empak cst |
| 8213 | 63 | p-type Si:B | [100] | 6" | 625 ±15 | P/E | 1-100 | SEMI Prime, 2Flats, Particle Count <20@0.2μm, Empak cst |
| 10095 | 25 | p-type Si:B | [100] | 6" | 675 | P/E | 20-Jan | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 10428 | 125 | p-type Si:B | [100] | 6" | 675 | P/E | 1-20 {5-15} | SEMI Prime, 1Flat (57.5mm), TTV<10μm, Bow<20μm, Warp<30μm, Empak cst |
| B0708 | 2 | p-type Si:B | [100] | 6" | 2,000 ±50 | P/P | Jan-35 | SEMI Prime, 1Flat (57.5mm), Individual cst, Sealed as a group of 2 |
| 7856 | 20 | p-type Si:B | [100] | 6" | 3,000 ±50 | P/E | 1-100 | SEMI Prime, 1Flat (57.5mm), in single wafer csts, packed in groups of 10 |
| A053 | 43 | p-type Si:B | [100] | 6" | 800 | P/P | 0.10-0.25 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| S5918 | 25 | p-type Si:B | [100] | 6" | 225 | P/P | 0.01-0.02 | SEMI TEST (scratched), 1Flat (57.5mm), in Unsealed Empak cst |
| G831 | 2 | p-type Si:B | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | 0.01-0.02 | SEMI TEST (scratched), 1Flat (57.5mm), in Unsealed Empak cst |
| A7222 | 48 | p-type Si:B | [100] | 6" | 650 | E/E | 0.001-1.000 | SEMI TEST, 2Flats, Unsealed Empak cst |
| 8119 | 94 | p-type Si:B | [100] | 6" | 675 | P/P | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Free of Striation marks, Empak cst |
| 10802 | 150 | p-type Si:B | [100] | 6" | 675 | P/E | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), TTV<8μm, Bow<5μm, Warp<10μm {as measured}. Empak cst |
| A0209 | 4 | p-type Si:B | [100] | 6" | 675 | P/E | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| E786 | 2 | p-type Si:B | [100] | 6" | 1,465 | C/C | 0.001-0.005 | SEMI, 1Flat (57.5mm), Empak cst |
| TS108 | 50 | p-type Si:B | [111-3°] ±0.5° | 6" | 625 ±15 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst |
| TS156 | 44 | p-type Si:B | [111-3°] ±0.5° | 6" | 625 ±15 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), TTV<8μm, in Empak cassettes of 11 & 16 & 17 wafers |
| 6659 | 10 | p-type Si:B | [111] ±0.5° | 6" | 675 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| J668 | 66 | p-type Si:B | [111] ±0.5° | 6" | 675 | E/E | 0.010-0.025 | SEMI, 1Flat (57.5mm), TTV<5μm, Empak cst |
| TS105 | 2 | p-type Si:B | [111-1.5°] ±0.35° | 6" | 675 | P/EOx | 0.001-0.002 {0.0017-0.0018} | SEMI Prime, 1Flat (57.5mm), Back-side LTO 400±40nm thick, TTV<6μm, Empak cst |
| A0420 | 3 | n-type Si:Sb | [110] ±0.5° | 6" | 625 | P/P | 0.01-0.02 | SEMI Prime, JEIDA Flat (47.5mm) at <001>, Empak cst |
| A0640 | 1 | n-type Si:P | [100] | 6" | 1,300 | P/P | 15-35 | SEMI notch Prime, Empak cst |
| 10252 | 100 | n-type Si:P | [100] ±1° | 6" | 675 | P/E | 20-Oct | SEMI Prime, 1Flat (57.5mm), Empak cst |
| A0243 | 4 | n-type Si:P | [100] | 6" | 725 | P/P | May-35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<0.6μm, Bow<8μm, Warp<18μm, with data on each wafers identified by Laser Mark, in Empak cst |
| B0101 | 1 | n-type Si:P | [100] | 6" | 725 | P/P | May-35 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
| 5814 | 160 | n-type Si:P | [100] | 6" | 925 ±15 | E/E | 5-35 {12.5-29.7} | JEIDA Prime, TTV<5μm, Empak cst |
| 10237 | 100 | n-type Si:P | [100] | 6" | 675 | P/P | 9-Mar | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 10348 | 350 | n-type Si:P | [100] | 6" | 675 | P/P | 9-Mar | SEMI Prime, 1Flat (57.5mm), Empak cst |
| B0405 | 398 | n-type Si:P | [100]±3° | 156x156 | 150 ±10 | As-Cut | 0.3-2.1 | Pseudo-Square PV, MCC Lifetime>1,300μs, packed in coin-roll of 150 wafers (smaller Qty at higher unit price) |
| 7170 | 138 | n-type Si:P | [100] ±1° | 6" | 675 | P/E | 1-20 {1.8-12.0} | SEMI Prime, 2 Flats, Back-side Acid etched, Empak cst |
| C716 | 7 | n-type Si:P | [100-28° towards[110]] ±1° | 6" | 700 | P/P | 1-100 | SEMI Prime, Notch, TTV<2μm, Empak cst |
| H246 | 6 | n-type Si:P | [100] | 6" | 710 ±15 | P/P | 1-100 | SEMI Prime, Notch, TTV<2μm, Empak cst |
| S5913 | 1 | n-type Si:P | [100] ±1° | 6" | 800 | P/E | 10-Jan | SEMI Prime, 1Flat (57.5mm), Empak cst |
| F859 | 46 | n-type Si:P | [100-25° towards[110]] ±1° | 6" | 800 | C/C | 1-100 | SEMI, Notch, Empak cst |
| F089 | 4 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 & 3 wafer |
| H631 | 7 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<3μm, in single wafer cst |
| 10848 | 5 | n-type Si:P | [100] | 6" | 3,000 | P/P | 10-Jan | SEMI Prime, 1Flat (57.5mm), Individual cst |
| C0405 | 26 | n-type Si:P | [100]±3° | 156x156 | 150 ±10 | L/L | 0.3-2.1 | Pseudo-Square PV, MCC Lifetime>1,300μs, packed in coin-roll of 26 wafers (smaller Qty at higher unit price) |
| 10663 | 50 | n-type Si:Sb | [100] | 6" | 625 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 10035 | 25 | n-type Si:Sb | [100] | 6" | 290 | P/E | 0.008-0.025 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 2533 | 2 | n-type Si:As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in single wafer cassettes |
| E533 | 1 | n-type Si:As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in single wafer cassettes |
| A0396 | 2 | n-type Si:P | [100] | 6" | 980 | P/P | 0.0018-0.0019 | SEMI notch Prime, with Lasermark, RED Phosphorus wafers, Empak cst |
| X6869 | 37 | n-type Si:As | [100] | 6" | 550 | E/E | 0.001-0.005 | SEMI TEST, Two Flats (Secondary @ 135°), In opened Empak cst |
| 4204 | 14 | n-type Si:As | [100] | 6" | 675 | P/EOx | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Back-side LTO (0.54-0.66)μm thick, TTV<4μm, Bow/Warp<20μm, Empak cst |
| TS101 | 42 | n-type Si:As | [100] | 6" | 675 ±15 | P/EOx | 0.001-0.005 {0.0036-0.0041} | SEMI Prime, 1Flat (57.5mm), TTV<5μm, LTO (0.3-0.6)μm thick, in Empak cassettes of 7, 16, 19 wafers |
| 10620 | 100 | n-type Si:As | [100] | 6" | 675 | P/E | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 10562 | 25 | n-type Si:As | [100] ±1° | 6" | 380 | P/E | <0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| C316 | 10 | n-type Si:P | [911] ±0.5° | 6" | 1,500 | G/G | 0.1-35.0 | SEMI Prime, 1Flat, Empak cst |
| P406 | 5 | n-type Si:P | [411] ±1° | 6" | 1,000 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| C0554 | 4 | n-type Si:P | [311] ±1° | 6" | 650 | P/P | Oct-35 | Test, Scratched, unsealed, 2Flats, Empak cst |
| D0554 | 4 | n-type Si:P | [311] ±1° | 6" | 650 | P/P | Oct-35 | Prime, 2Flats, Empak cst |
| TS037 | 25 | n-type Si:P | [111-1.5°] ±0.5° | 6" | 675 | P/E | 3-12 {5.0-8.8} | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 10787 | 500 | n-type Si:P | [111-3.5°] ±0.5° | 6" | 267 ±10 | E/E | 0.171-0.190 | Prime, 1Flat, Empak cst |
| TS109 | 617 | n-type Si:As | [111-4°] ±0.5° | 6" | 508 ±15 | P/E | 0.0023-0.0026 | SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst |
| TS157 | 6 | n-type Si:As | [111-4°] ±0.5° | 6" | 508 ±15 | P/E | 0.0023-0.0026 | SEMI Prime, 1Flat (57.5mm), TTV<8μm, in Empak cassettes of 2 & 4 wafers |
| TS102 | 100 | n-type Si:As | [111-4°] ±0.5° | 6" | 508 | P/E | 0.001-0.005 {0.0038-0.0042} | SEMI Prime, 1Flat (57.5mm), TTV<4μm, Bow<2μm, Warp<15μm, Empak cst |
| TS107 | 68 | n-type Si:As | [111-2.5°] ±0.5° | 6" | 625 ±15 | P/EOx | 0.001-0.004 {0.0021-0.0036} | SEMI Prime, JEIDA Flat (47.5mm), Back-side LTO (0.45-0.55)μm, TTV<6μm, Empak cst |
| A0457 | 2 | n-type Si:P | [522] ±1° | 6" | 650 | P/P | Oct-35 | SEMI Prime, 2Flats, Empak cst |
| X9093 | 25 | Si | 6" | P/EOx | SEMI TEST, 1Flat, in Unsealed Empak cst | |||
| 1660 | 19 | n-type Si:As | [100] | 6" | 675 | OxP/EOx | 0.001-0.005 | SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick on both sides, Empak cst |
| F662 | 5 | p-type Si:B | [100] | 6" | 625 | P/P | FZ 2,652-2,743 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| A0626 | 3 | p-type Si:B | [100] ±0.1° | 6" | 775 | P/P | FZ >2,500 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, Empak cst |
| S5885 | 10 | p-type Si:B | [100] ±1° | 6" | 700 | P/P | FZ 80-120 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| H503 | 15 | p-type Si:B | [100] | 6" | 735 | P/P | FZ >50 | SEMI Prime, 1Flat, TTV<5μm, Empak cst, |
| H866 | 10 | p-type Si:B | [100] | 6" | 750 | P/P | FZ >50 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |
| 6030 | 5 | p-type Si:B | [100] | 6" | 650 | P/P | FZ 8-13 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| B0206 | 150 | p-type Si:B | [100] | 6" | 625 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), wiith LaserMark, Empak cst |
| D287 | 5 | p-type Si:B | [100] ±0.05° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| E287 | 15 | p-type Si:B | [100] ±0.1° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| F231 | 10 | p-type Si:B | [100] | 6" | 650 | P/P | FZ 1-30 {1.379-1.382} | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,705μs, Empak cst |
| O573 | 15 | p-type Si:B | [100] ±0.05° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, tight Surface & Flat Orientation tolerance, MCC Lifetime>1,000μs, Empak cst |
| A0206 | 62 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), with LaserMark, Empak cst |
| S5939 | 3 | n-type Si:P | [100] | 6" | 2,000 | P/P | FZ 10,000-30,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| C208 | 1 | n-type Si:P | [100] ±1° | 6" | 950 ±50 | P/P | FZ >9,500 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>6,000μs, Empak cst |
| B0023 | 75 | n-type Si:P | [100] | 6" | 460 | P/P | FZ 50-70 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000μs, Empak cst |
| 8166 | 25 | n-type Si:P | [100] | 6" | 500 ±15 | P/P | FZ 50-70 | SEMI Prime, 1Flat, with LaserMark, Empak cst |
| B0261 | 50 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 50-70 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| A564 | 3 | n-type Si:P | [100] | 6" | 250 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| H883 | 5 | n-type Si:P | [100] | 6" | 625 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| B0782 | 10 | n-type Si:P | [100] | 6" | 485 | P/P | FZ 20-70 | SEMI Prime, 1Flat, Empak cst |
| E064 | 10 | n-type Si:P | [111] ±0.5° | 6" | 425 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Empak cst |
| K343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 800 ±10 | P/P | FZ >3,000 | SEMI Prime, 1 JEIDA Flat (47.5mm), TTV<4μm, MCC Lifetime>1,000μs, Empak cst |
| L343 | 15 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 950 ±10 | P/P | FZ >3,000 | SEMI Prime, 1 JEIDA Flat (47.5mm), TTV<4μm, MCC Lifetime>1,000μs, Empak cst |
| D817 | 5 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >65,000 | SEMI notch Prime, Empak cst |
| A752 | 10 | Intrinsic Si:- | [100] ±0.1° | 6" | 720 | P/P | FZ >65,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| K299 | 5 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| J299 | 5 | Intrinsic Si:- | [100] | 6" | 750 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| J816 | 4 | Intrinsic Si:- | [100] | 6" | 1,000 | P/P | FZ >10,000 | SEMI Prime, Notch, MCC Lifetime>1,400μs, Empak cst |
| D233 | 1 | Intrinsic Si:- | [111] ±0.5° | 6" | 875 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 10229 | 50 | p-type Si:B | [110] ±0.25° | 6" | 625 ±15 | P/E | 20-Oct | SEMI Prime 2Flats {PF at <111>±0.5°, |
| SF at <111>±5.0° CW 109.5° from PF}, TTV<5μm, Empak cst | ||||||||
| G045 | 5 | p-type Si:B | [110] ±0.5° | 6" | 625 | P/E | 24-Oct | SEMI Prime, 1Flat at <111>, Empak cst |
| C980 | 10 | p-type Si:B | [100] | 6" | 285 | P/P | 30-Oct | SEMI Prime Notch,, Empak cst |
| K405 | 5 | p-type Si:B | [100] | 6" | 1,000 | P/P | 15-Oct | SEMI Prime, 1Flat (57.5mm), Empak cst |
| M838 | 25 | p-type Si:B | [100-9.74°] ±0.1° | 6" | 275 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Empak cst with lasermark |
| L586 | 5 | p-type Si:B | [100] | 6" | 400 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<10μm, Bow/Warp<20μm, Empak cst |
| E462 | 3 | p-type Si:B | [100] | 6" | 440 | P/E | 30-Jan | SEMI Prime, 1Flat (57.5mm), Empak cst |
| I354 | 25 | p-type Si:B | [100-9.7° towards[001]] ±0.1° | 6" | 475 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| A0515 | 10 | p-type Si:B | [100] | 6" | 500 | P/P | 30-Jan | SEMI, 1Flat (57.5mm), Empak cst |
| B0192 | 5 | p-type Si:B | [100] | 6" | 675 ±5 | P/P | 30-Jan | SEMI Prime, 1Flat (57.5mm), TTV<1μm, with LaserMark, Empak cst |
| E966 | 10 | p-type Si:B | [100] | 6" | 675 | P/P | 5-Jan | SEMI Prime, 1Flat (57.5mm), Empak cst |
| G264 | 2 | p-type Si:B | [100] | 6" | 675 | P/P | 5-Jan | SEMI Prime, 1Flat(57.5mm), in Soft cst |
| D486 | 5 | p-type Si:B | [100] | 6" | 1,000 | P/P | 30-Jan | SEMI Prime, 1Flat (57.5mm), TTV<4μm, Empak cst |
| C0020 | 2 | p-type Si:B | [100] | 6" | 2,150 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, Individual cst |
| A0444 | 3 | p-type Si:B | [100] | 6" | 2,200 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, Individual cst |
| B0444 | 4 | p-type Si:B | [100] | 6" | 2,200 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, Individual cst |
| B0052 | 1 | p-type Si:B | [100] | 6" | 2,950 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst |
| E005 | 3 | p-type Si:B | [100] | 6" | 350 ±50 | P/P | 0.015-0.020 | SEMI Prime, JEIDA Flat (47.5mm), Empak cst |
| A0092 | 4 | p-type Si:B | [100] | 6" | 300 | P/P | 0.013-0.020 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| I053 | 5 | p-type Si:B | [100] | 6" | 525 | P/P | 0.013-0.020 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| S5794 | 5 | p-type Si:B | [100] | 6" | 275 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| S5821 | 25 | p-type Si:B | [100] | 6" | 275 | P/P | 0.01-0.05 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
| S5883 | 25 | p-type Si:B | [100] | 6" | 275 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| G253 | 1 | p-type Si:B | [100] | 6" | 1,450 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| I516 | 3 | p-type Si:B | [100] | 6" | 350 ±50 | P/P | 0.001-0.030 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| F786 | 25 | p-type Si:B | [100] | 6" | 675 | P/P | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), TTV<1μm, Empak cst |
| A0389 | 25 | p-type Si:B | [100] | 6" | 675 | P/E | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Free of Striations, Awaiting final polish, Empak cst |
| A786 | 5 | p-type Si:B | [100] | 6" | 1,300 | P/P | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| D561 | 5 | p-type Si:B | [100] ±0.1° | 6" | 400 ±10 | P/P | <0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| B0420 | 4 | n-type Si:Sb | [110] ±0.5° | 6" | 625 | P/P | 0.01-0.02 | SEMI Prime, JEIDA Flat (47.5mm) at <001>, Empak cst |
| N740 | 5 | n-type Si:Sb | [110] ±0.5° | 6" | 625 | P/P | 0.01-0.02 | SEMI Prime, JEIDA Flat (47.5mm) at <001>, Empak cst |
| S5927 | 5 | n-type Si:P | [100] | 6" | 625 | P/E | 30-60 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| B0640 | 1 | n-type Si:P | [100] | 6" | 1,300 | P/P | 15-35 | SEMI notch Prime, Empak cst |
| F270 | 5 | n-type Si:P | [100] | 6" | 675 | P/P | Oct-35 | SEMI notch Prime, TTV<2μm, Empak cst |
| G270 | 5 | n-type Si:P | [100] | 6" | 675 | P/P | Oct-35 | SEMI Notch Prime, TTV<5μm, Lasermark, Empak cst |
| K286 | 3 | n-type Si:P | [100] | 6" | 2,600 ±50 | P/P | Oct-35 | NO Flats, Individual cst |
| F509 | 8 | n-type Si:P | [100] | 6" | 650 | P/P | May-35 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| B0243 | 50 | n-type Si:P | [100] | 6" | 725 | P/P | May-35 | SEMI Prime, JEIDA Flat (47.5mm), TTV<1μm, Empak cst |
| I324 | 10 | n-type Si:P | [100] | 6" | 725 | P/P | May-35 | JEIDA Prime, Empak cst |
| J324 | 5 | n-type Si:P | [100] | 6" | 725 | P/P | May-35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<5μm, TIR<1μm, Bow<10μm, Warp<20μm, with Laser Mark, Empak cst |
| S5861 | 15 | n-type Si:P | [100] | 6" | 675 ±15 | P/E | 10-Mar | SEMI Prime, 1Flat (57.5mm), Empak cst |
| S5781 | 10 | n-type Si:P | [100] | 6" | 675 | P/E | 2.7-4.0 | SEMI Prime, 1Flat, Empak cst |
| S5884 | 5 | n-type Si:P | [100] | 6" | 235 ±35 | P/P | 5-Jan | SEMI Prime, 1Flat (57.5mm), Empak cst |
| E556 | 8 | n-type Si:P | [100] | 6" | 475 | P/P | 1-100 | SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LaserMark, Empak cst |
| C971 | 25 | n-type Si:P | [100-25° towards[110]] ±1° | 6" | 650 | P/P | 1-100 | SEMI notch Prime, TTV<1μm, with LaserMark, Empak cst |
| G041 | 5 | n-type Si:P | [100] | 6" | 650 | P/P | 1-100 | JEIDA Prime, TTV<1μm, LaserMark, Empak cst |
| P190 | 20 | n-type Si:P | [100] | 6" | 650 | P/P | 1-100 | SEMI Prime, JEIDA Flat (47.5mm), LaserMark, TTV maps, TTV<1μm, Empak cst |
| C946 | 5 | n-type Si:P | [100] | 6" | 675 | P/P | 1-100 | SEMI notch Prime, Lasermark. Extra low TTV for extra charge, Empak cst |
| D716 | 6 | n-type Si:P | [100-28° towards[110]] ±1° | 6" | 675 | P/P | 1-100 | SEMI Notch Prime, TTV<5μm, Empak cst |
| B0402 | 25 | n-type Si:P | [100] | 6" | 700 | P/P | 1-100 | SEMI notch, Empak cst |
| D946 | 10 | n-type Si:P | [100] | 6" | 700 | P/P | 1-100 | SEMI notch Prime, Empak cst |
| E946 | 25 | n-type Si:P | [100] | 6" | 700 | P/P | 1-100 | SEMI Prime Notch, LaseMark, Empak cst |
| J334 | 5 | n-type Si:P | [100-25° towards[110]] ±1° | 6" | 700 | P/P | 1-100 | SEMI notch Prime, Empak cst |
| G089 | 5 | n-type Si:P | [100] | 6" | 1,875 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers |
| G631 | 25 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<3μm, Individual cst |
| B0643 | 3 | n-type Si:P | [100] | 6" | 2,950 ±50 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst |
| 10244 | 25 | n-type Si:P | [100] | 6" | 3,000 | P/P | 10-Jan | SEMI Prime, 1Flat (57.5mm), Individual cst |
| A711 | 5 | n-type Si:P | [100] | 6" | 3,000 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst |
| G541 | 100 | n-type Si:P | [100] | 6" | 675 | P/EOx | 0.001-0.002 | SEMI Test - RED Phos wafers, with stripable Epi layer 3.5μm thick & back-side oxide seal, 1Flat (57.5mm), Empak cst |
| A0552 | 1 | n-type Si:P | [211] ±1° | 6" | 625 | P/P | Oct-35 | Prime, 2Flats, Empak cst |
| A0516 | 6 | n-type Si:P | [522] | 6" | 650 | P/P | Oct-35 | Prime, 2Flats, Empak cst |
| A167 | 5 | n-type Si:P | [522] ±1° | 6" | 650 | P/P | Oct-35 | SEMI Prime, 2Flats, Empak cst |
| B0457 | 1 | n-type Si:P | [522] ±1° | 6" | 650 | P/P | Oct-35 | SEMI Prime, 2Flats, Empak cst |