We have a large selection of hard to find 125mm silicon wafers in stock. Please choose from the list or fill out the form with your specs and quantity.
Like 100mm and 150mm silicon wafers, 125mm silicon wafers are also widely used as a substrate material in the semiconductor industry for the fabrication of integrated circuits (ICs). They are also used in the production of a variety of other electronic and optoelectronic devices, such as solar cells, LED lighting, and thin-film transistors.
In the semiconductor industry, 125mm silicon wafers are used in the fabrication of a variety of ICs, including microprocessors, memory chips, and other types of integrated circuits. The wafers are coated with a thin layer of photoresist and then patterned using photolithography techniques to create the desired circuit patterns. The wafers are then subjected to various processing steps, such as etching and doping, to create the active and passive components of the IC.
In addition to their use in the semiconductor industry, 125mm silicon wafers are also used in the production of solar cells. They are coated with a thin layer of photovoltaic material, such as crystalline silicon, and then patterned and processed to create solar cells with high conversion efficiencies.
125mm silicon wafers are also used in the production of LED lighting, where they serve as a substrate material for the growth of LED crystals. They are also used in the production of thin-film transistors, which are used in LCD displays and other electronic devices. The smaller size of 125mm wafers may be preferred for certain applications due to reduced cost and/or the ability to fit into smaller processing equipment.
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted |
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Item | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment |
(μm) | Ωcm | ||||||
S5614 | p-type Si:B | [100] | 5" | 635 ±15 | E/E | FZ >5,000 | SEMI, 2Flats, Empak cst |
5729 | p-type Si:B | [100] | 5" | 889 ±13 | P/E | FZ >1,000 | SEMI Prime, 2Flats, Empak cst |
5744 | p-type Si:B | [100] | 5" | 920 ±10 | E/E | FZ >1,000 | SEMI, 2Flats, Empak cst |
S5907 | p-type Si:B | [100] | 5" | 1,010 ±15 | P/E | FZ >1,000 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |
7472 | p-type Si:B | [100] | 5" | 240 ±10 | P/P | FZ 240-280 | SEMI Prime, 1Flat, TTV<5μm, MCC Lifetime>1,000μs, Empak cst |
J866 | p-type Si:B | [100] | 5" | 625 | P/E | FZ 80-120 | SEMI Prime, 1Flat, Empak cst |
B863 | n-type Si:P | [100] | 5" | 400 | P/E | FZ 7,000-14,300 | SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst |
D863 | n-type Si:P | [100] | 5" | 400 | P/E | FZ 7,000-14,300 | SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst |
C863 | n-type Si:P | [100] | 5" | 350 | P/E | FZ 5,000-10,000 | SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst |
F083 | n-type Si:P | [111] ±0.1° | 5" | 200 ±15 | BROKEN | FZ >3,000 | Broken L/L wafers, in 2 pieces |
S5802 | p-type Si:B | [100] | 5" | 600 ±10 | E/E | 2.0-3.5 | SEMI, 1Flat, coin roll |
S5598 | p-type Si:B | [100] | 5" | 228 | P/P | 1--10 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |
D408 | p-type Si:B | [100] | 5" | 525 | P/E | 1-100 | Silicon Rings. 5" outside diameter and 4" inside diameter to hold 4" wafers |
S5935 | p-type Si:B | [100] | 5" | 565 ±10 | E/E | 0.3-50.0 | SEMI, 2Flats, coin roll |
9228 | p-type Si:B | [100] | 5" | 525 | P/EOx | 0.002-0.004 {0.0031-0.0035} | SEMI Prime, 1Flat, Free of Striations, TTV<5μm, Back-Side LTO seal 0.50±0.05μm thick, in Empak cassettes of 7 wafers |
X2217 | p-type Si:B | [100] | 5" | P/EOx | SEMI Test, 2Flats, Unsealed Open Empak cst | ||
X7135 | p-type Si:B | [100] | 5" | 710 | E/E | ? | SEMI TEST {Resistivity unknown}, 1Flat, Empak cst |
TS050 | p-type Si:B | [111-4°] ±0.5° | 5" | 538 ±13 | P/E | 3-6 {3.64-5.17} | SEMI Prime, 1Flat, Empak cst |
TS074 | p-type Si:B | [111-4°] ±0.5° | 5" | 538 ±13 | P/E | 3-6 {3.64-5.17} | SEMI Prime, 1Flat, in Empak cst of 12+14 wafers |
E683 | p-type Si:B | [111-3.5°] ±1.0° | 5" | 375 ±15 | P/EOx | 0.012-0.018 {0.0151-0.0153} | SEMI Prime, 1Flat 42.5mm long at 15° CW from (110) , Empak cst |
X7134 | n-type Si:As | [100] | 5" | E/E | 0.001-0.005 | SEMI TEST (unsealed), 1Flat, Empak cst | |
TS003 | n-type Si:As | [100-1°] ±0.25° | 5" | 375 | P/EOx | 0.0010-0.0035 {0.0029-0.0032} | SEMI, 1Flat, HBSD+LTO 800nm, Empak cst |
X2169 | n-type Si:As | [100] | 5" | 375 | P/EOx | 0.001-0.005 | SEMI TEST, Back-side with Oxide Seal, 1Flat, Empak cst |
6991 | n-type Si:As | [100] | 5" | 625 | P/E | 0.001-0.007 | SEMI TEST, 2Flats, Empak cst |
B862 | n-type Si:Sb | [111-3.0°] ±0.5° | 5" | 625 | P/E | 0.015-0.020 {0.0152-0.0185} | SEMI Prime, 2Flats, Empak cst |
TS106 | n-type Si:Sb | [111-4°] ±0.5° | 5" | 525 | P/EOx | 0.008-0.020 {0.0160-0.0168} | SEMI Prime, 1Flat, Back-side LTO (0.45-0.55)μm, TTV<8μm, in Empak cassettes of 25 + 10 + 10 wafers |
7865 | n-type Si:Sb | [111-4°] ±0.5° | 5" | 525 | P/E | 0.008-0.020 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |
TS060 | n-type Si:P | [111-4°] ±0.5° | 5" | 433 ±93 | P/EOx | 0.001-0.002 {0.0014-0.0017} | SEMI Prime, 1Flat, Back-side LTO 850nm thick, Free of Striations, Empak cst |
7188 | n-type Si:As | [111] | 5" | 525 | P/EOx | 0.001-0.005 | SEMI TEST, 1Flat, Back-side Oxide seal, in Unsealed Empak cassettes |
C0202 | p-type Si:B | [111-3.5°] ±1.0° | 5" | 375 ±15 | OxP/EOx | 0.012-0.018 | SEMI TEST {Polishing Defects}, 1Flat 42.5mm at 15±1° CW from {110}, Empak cst |
S5615 | p-type Si:B | [100] | 5" | 575 | P/E | FZ >5,000 | SEMI Prime, 2Flats, Empak cst |
E804 | p-type Si:B | [100] | 5" | 762 | P/P | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<2μm, Bow<10μm, Warp<20μm, Empak cst |
H744 | p-type Si:B | [100] | 5" | 750 | P/P | FZ >1,000 | SEMI Prime, 2Flats, Empak cst |
S5632 | p-type Si:B | [100] | 5" | 800 | P/P | FZ >1,000 | SEMI Prime, 2Flats, Empak cst |
S5900 | n-type Si:P | [111] ±0.5° | 5" | 275 | P/P | FZ 7,000-20,000 | SEMI Prime, 2Flats, Empak cst |
7773 | p-type Si:B | [100] | 5" | 610 | P/P | 16-24 | SEMI Prime, 2Flats, Empak cst |
D868 | p-type Si:B | [100] | 5" | 590 | P/P | 1--30 | SEMI Prime with Notch, TTV<1μm, Bow/Warp<10μm, Empak cst |
A0680 | p-type Si:B | [100] | 5" | 950 | P/P | 1--20 | SEMI Prime, 1Flat, Empak cst |
S5936 | p-type Si:B | [100] | 5" | 565 ±10 | P/E | 0.3-50.0 | SEMI Prime, 2Flats, coin roll |
I417 | n-type Si:P | [100] | 5" | 725 | P/P | 5--35 | SEMI Prime, 1Flat, TTV<2μm, Empak cst |
A683 | n-type Si:P | [100] | 5" | 762 ±12 | P/P | 5--35 | SEMI Prime, 1Flat, TTV<1μm, Bow<5μm, Warp<10μm, Measurements and thickness maps for each wafers, Empak cst |