125mm Silicon Wafers for Research and Developement

125mm Silicon Wafers in Stock

 

We have a large selection of hard to find 125mm silicon wafers in stock. Please choose from the list or fill out the form with your specs and quantity.

 

 

 

125mm Silicon Wafer Applications

 

Like 100mm and 150mm silicon wafers, 125mm silicon wafers are also widely used as a substrate material in the semiconductor industry for the fabrication of integrated circuits (ICs). They are also used in the production of a variety of other electronic and optoelectronic devices, such as solar cells, LED lighting, and thin-film transistors.

In the semiconductor industry, 125mm silicon wafers are used in the fabrication of a variety of ICs, including microprocessors, memory chips, and other types of integrated circuits. The wafers are coated with a thin layer of photoresist and then patterned using photolithography techniques to create the desired circuit patterns. The wafers are then subjected to various processing steps, such as etching and doping, to create the active and passive components of the IC.

 

In addition to their use in the semiconductor industry, 125mm silicon wafers are also used in the production of solar cells. They are coated with a thin layer of photovoltaic material, such as crystalline silicon, and then patterned and processed to create solar cells with high conversion efficiencies.

 

125mm silicon wafers are also used in the production of LED lighting, where they serve as a substrate material for the growth of LED crystals. They are also used in the production of thin-film transistors, which are used in LCD displays and other electronic devices. The smaller size of 125mm wafers may be preferred for certain applications due to reduced cost and/or the ability to fit into smaller processing equipment.


 

 

Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted
Item Material Orient. Diam. Thck Surf. Resistivity Comment
(μm) Ωcm
S5614 p-type Si:B [100] 5" 635 ±15 E/E FZ >5,000 SEMI, 2Flats, Empak cst
5729 p-type Si:B [100] 5" 889 ±13 P/E FZ >1,000 SEMI Prime, 2Flats, Empak cst
5744 p-type Si:B [100] 5" 920 ±10 E/E FZ >1,000 SEMI, 2Flats, Empak cst
S5907 p-type Si:B [100] 5" 1,010 ±15 P/E FZ >1,000 SEMI Prime, 1Flat, TTV<5μm, Empak cst
7472 p-type Si:B [100] 5" 240 ±10 P/P FZ 240-280 SEMI Prime, 1Flat, TTV<5μm, MCC Lifetime>1,000μs, Empak cst
J866 p-type Si:B [100] 5" 625 P/E FZ 80-120 SEMI Prime, 1Flat, Empak cst
B863 n-type Si:P [100] 5" 400 P/E FZ 7,000-14,300 SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst
D863 n-type Si:P [100] 5" 400 P/E FZ 7,000-14,300 SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst
C863 n-type Si:P [100] 5" 350 P/E FZ 5,000-10,000 SEMI Prime, 1Flat, Bow/Warp<20μm, Empak cst
F083 n-type Si:P [111] ±0.1° 5" 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces
S5802 p-type Si:B [100] 5" 600 ±10 E/E 2.0-3.5 SEMI, 1Flat, coin roll
S5598 p-type Si:B [100] 5" 228 P/P 1--10 SEMI Prime, 1Flat, TTV<5μm, Empak cst
D408 p-type Si:B [100] 5" 525 P/E 1-100 Silicon Rings. 5" outside diameter and 4" inside diameter to hold 4" wafers
S5935 p-type Si:B [100] 5" 565 ±10 E/E 0.3-50.0 SEMI, 2Flats, coin roll
9228 p-type Si:B [100] 5" 525 P/EOx 0.002-0.004 {0.0031-0.0035} SEMI Prime, 1Flat, Free of Striations, TTV<5μm, Back-Side LTO seal 0.50±0.05μm thick, in Empak cassettes of 7 wafers
X2217 p-type Si:B [100] 5"   P/EOx   SEMI Test, 2Flats, Unsealed Open Empak cst
X7135 p-type Si:B [100] 5" 710 E/E ? SEMI TEST {Resistivity unknown}, 1Flat, Empak cst
TS050 p-type Si:B [111-4°] ±0.5° 5" 538 ±13 P/E 3-6 {3.64-5.17} SEMI Prime, 1Flat, Empak cst
TS074 p-type Si:B [111-4°] ±0.5° 5" 538 ±13 P/E 3-6 {3.64-5.17} SEMI Prime, 1Flat, in Empak cst of 12+14 wafers
E683 p-type Si:B [111-3.5°] ±1.0° 5" 375 ±15 P/EOx 0.012-0.018 {0.0151-0.0153} SEMI Prime, 1Flat 42.5mm long at 15° CW from (110) , Empak cst
X7134 n-type Si:As [100] 5"   E/E 0.001-0.005 SEMI TEST (unsealed), 1Flat, Empak cst
TS003 n-type Si:As [100-1°] ±0.25° 5" 375 P/EOx 0.0010-0.0035 {0.0029-0.0032} SEMI, 1Flat, HBSD+LTO 800nm, Empak cst
X2169 n-type Si:As [100] 5" 375 P/EOx 0.001-0.005 SEMI TEST, Back-side with Oxide Seal, 1Flat, Empak cst
6991 n-type Si:As [100] 5" 625 P/E 0.001-0.007 SEMI TEST, 2Flats, Empak cst
B862 n-type Si:Sb [111-3.0°] ±0.5° 5" 625 P/E 0.015-0.020 {0.0152-0.0185} SEMI Prime, 2Flats, Empak cst
TS106 n-type Si:Sb [111-4°] ±0.5° 5" 525 P/EOx 0.008-0.020 {0.0160-0.0168} SEMI Prime, 1Flat, Back-side LTO (0.45-0.55)μm, TTV<8μm, in Empak cassettes of 25 + 10 + 10 wafers
7865 n-type Si:Sb [111-4°] ±0.5° 5" 525 P/E 0.008-0.020 SEMI Prime, 1Flat, TTV<5μm, Empak cst
TS060 n-type Si:P [111-4°] ±0.5° 5" 433 ±93 P/EOx 0.001-0.002 {0.0014-0.0017} SEMI Prime, 1Flat, Back-side LTO 850nm thick, Free of Striations, Empak cst
7188 n-type Si:As [111] 5" 525 P/EOx 0.001-0.005 SEMI TEST, 1Flat, Back-side Oxide seal, in Unsealed Empak cassettes
C0202 p-type Si:B [111-3.5°] ±1.0° 5" 375 ±15 OxP/EOx 0.012-0.018 SEMI TEST {Polishing Defects}, 1Flat 42.5mm at 15±1° CW from {110}, Empak cst
S5615 p-type Si:B [100] 5" 575 P/E FZ >5,000 SEMI Prime, 2Flats, Empak cst
E804 p-type Si:B [100] 5" 762 P/P FZ 2,000-3,000 SEMI Prime, 1Flat, TTV<2μm, Bow<10μm, Warp<20μm, Empak cst
H744 p-type Si:B [100] 5" 750 P/P FZ >1,000 SEMI Prime, 2Flats, Empak cst
S5632 p-type Si:B [100] 5" 800 P/P FZ >1,000 SEMI Prime, 2Flats, Empak cst
S5900 n-type Si:P [111] ±0.5° 5" 275 P/P FZ 7,000-20,000 SEMI Prime, 2Flats, Empak cst
7773 p-type Si:B [100] 5" 610 P/P 16-24 SEMI Prime, 2Flats, Empak cst
D868 p-type Si:B [100] 5" 590 P/P 1--30 SEMI Prime with Notch, TTV<1μm, Bow/Warp<10μm, Empak cst
A0680 p-type Si:B [100] 5" 950 P/P 1--20 SEMI Prime, 1Flat, Empak cst
S5936 p-type Si:B [100] 5" 565 ±10 P/E 0.3-50.0 SEMI Prime, 2Flats, coin roll
I417 n-type Si:P [100] 5" 725 P/P 5--35 SEMI Prime, 1Flat, TTV<2μm, Empak cst
A683 n-type Si:P [100] 5" 762 ±12 P/P 5--35 SEMI Prime, 1Flat, TTV<1μm, Bow<5μm, Warp<10μm, Measurements and thickness maps for each wafers, Empak cst